Wafer-scale, epitaxial growth of single layer hexagonal boron nitride on Pt(111)

نویسندگان

چکیده

Abstract Single-layer hexagonal boron nitride is produced on 2 inch Pt(111)/sapphire wafers. The growth with borazine vapor deposition at process temperatures between 1000 and 1300 K in situ investigated by photoelectron yield measurements. kinetics slower higher follows a tanh law which better fits for temperatures. crystal-quality of ( h -BN)/Pt(111) inferred from scanning low energy electron diffraction (x-y LEED). data indicate strong dependence the epitaxy temperature. dominant structure an aligned coincidence lattice 10 -BN 9 Pt(1 × 1) unit cells substrate twinning millimeter scale.

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ژورنال

عنوان ژورنال: JPhys materials

سال: 2021

ISSN: ['2515-7639']

DOI: https://doi.org/10.1088/2515-7639/ac0d9e